 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 200 Volt VDS * RDS(on)= 10 ZVN2120A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 200 180 2 20 700 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 200 1 3 20 10 100 500 10 100 85 20 7 8 8 20 12 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns V DD 25V, I D=250mA V DS=25 V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=200V, V GS=0 V DS=160V, V GS=0V, T=125C(2) V DS=25V, V GS=10V V GS=10V,I D=250mA V DS=25V,I D=250mA I D(on) Static Drain-Source On-State R DS(on) Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) g fs C iss C oss C rss t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. 3-368 ( 3 ZVN2120A TYPICAL CHARACTERISTICS ID(on) -On-State Drain Current (Amps) VGS=10V 8V 7V 6V 5V ID(on) -On-State Drain Current (Amps) 2.0 1.4 1.2 10V VGS= 8V 7V 6V 5V 4V 1.6 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 0.8 4V 0.4 3V 2V 0 10 20 30 40 50 3V 0 2V 10 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) 20 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 VDS= 25V 16 12 ID= 1.0A 10V 8 4 0.5A 0 0 2 4 6 8 0.1A 10 10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance () Transfer Characteristics 100 2.4 Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 10 ID= 1.0A 0.5A 0.1A rc ou -S ain Dr e eR eR nc ta sis n) (o DS VGS=10V ID=250mA Gate Th reshold Voltage VGS=VDS ID=1mA VGS(TH) 1 1 2 3 4 5 6 7 8 9 10 20 20 40 60 80 100 120 140 160 180 VGS-Gate Source Voltage (Volts) Tj-Junction Temperature (C) On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) v Temperature 3-369 ZVN2120A TYPICAL CHARACTERISTICS 500 500 gfs-Transconductance (mS) gfs-Transconductance (mS) 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS=25V 400 300 200 100 0 0 2 4 6 8 10 VDS=25V ID(on)- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage 16 VGS-Gate Source Voltage (Volts) 100 14 12 10 8 6 4 2 0 ID=700mA VDS= 50V 100V 150V C-Capacitance (pF) 80 60 40 20 Coss Crss 0 10 20 30 40 50 Ciss 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3-370 |
Price & Availability of ZVN2120A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |